Datasheet

SFH 4860
3
Version 1.3 | 2018-05-25
Characteristics
I
F
= 50 mA; t
p
= 20 ms; T
A
= 25 °C
Parameter Symbol Values
Peak wavelength
λ
peak
typ. 660 nm
Spectral bandwidth at 50% I
rel,max
∆λ
typ. 25 nm
Half angle
φ
typ. 50 °
Dimensions of active chip area L x W typ. 0.325 x 0.325
mm x mm
Rise time (10% / 90%)
I
F
= 50 mA; R
L
= 50 Ω
t
r
typ. 100 ns
Fall time (10% / 90%)
I
F
= 50 mA; R
L
= 50 Ω
t
f
typ. 100 ns
Forward voltage V
F
typ.
max.
2 V
2.8 V
Reverse current
2)
V
R
= 3 V
I
R
max.
typ.
10 µA
0.01 µA
Total radiant 󰘱ux
3)
Φ
e
typ. 3 mW
Radiant intensity
1)
I
F
= 1 A; t
p
= 100 µs
I
e
typ. 15 mW/sr
Temperature coe󰘲cient of brightness TC
I
typ. -0.4 % / K
Temperature coe󰘲cient of voltage TC
V
typ. -3 mV / K
Temperature coe󰘲cient of wavelength
TC
λ
typ. 0.16 nm / K
Thermal resistance junction ambient real R
thJA
max. 450 K / W
Thermal resistance junction case real R
thJC
max. 160 K / W
Brightness Groups
T
A
= 25 °C
Group Radiant intensity Radiant intensity
I
F
= 50 mA; t
p
= 20 ms I
F
= 50 mA; t
p
= 20 ms
min. max.
I
e
I
e
K 0.63 mW/sr 1.25 mW/sr
L 1.00 mW/sr 2.00 mW/sr
.