Datasheet

2017-10-23 2
Version 1.0 SFH 4787S
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating temperature range T
op
-40 ... 85 °C
Storage temperature range T
stg
-40 ... 85 °C
Junction temperature T
j
145 °C
Reverse voltage V
R
1 V
Forward current I
F
500 mA
Surge current
(t
p
≤ 200 µs, D = 0)
I
FSM
2 A
Power consumption P
tot
1.8 W
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2 kV
Thermal resistance junction - soldering point R
thJS
25 K / W
Note: For the forward current and power consumption please see "maximum permissible forward current"
diagram
Parameter Symbol Values Unit
Peak wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
peak
820 nm
Centroid wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
centroid
810 nm
Spectral bandwidth at 50% of I
max
(I
F
= 1 A, t
p
= 10 ms)
(typ) ∆λ 30 nm
Half angle (typ) ϕ ± 18 °
Dimensions of active chip area (typ) L x W 0.75 x 0.75 mm x
mm
Rise and fall times of I
e
( 10% and 90% of I
e max
)
(I
F
= 1 A, R
L
= 50 Ω)
(typ) t
r
/ t
f
8/ 14 ns
Forward voltage
(I
F
= 0.5 A, t
p
= 100 µs)
(typ (max)) V
F
3.3 (≤ 3.6) V
Forward voltage
(I
F
= 1 A, t
p
= 100 μs)
(typ (max)) V
F
3.55 (≤ 4) V
Reverse current
(V
R
= 5 V)
I
R
not designed for
reverse operation
µA
Total radiant flux
(I
F
= 1 A, t
p
= 100 µs)
(typ) Φ
e
720 mW