Datasheet

SFH 4775S
3
Version 1.0 | 2018-11-06
Characteristics
I
F
= 1000 mA; t
p
= 10 ms; T
A
= 25 °C
Parameter Symbol Values
Peak wavelength λ
peak
typ. 950 nm
Centroid wavelength λ
centroid
typ. 940 nm
Spectral bandwidth at 50% I
rel,max
∆λ typ. 37 nm
Half angle φ typ. 60 °
Dimensions of active chip area L x W typ. 1 x 1
mm x mm
Rise time (10% / 90%)
I
F
= 3 A; R
L
= 50 Ω
t
r
typ. 11 ns
Fall time (10% / 90%)
I
F
= 3 A; R
L
= 50 Ω
t
f
typ. 14 ns
Forward voltage V
F
typ.
max.
2.8 V
3.6 V
Forward voltage
I
F
= 1.5 A; t
p
= 100 µs
V
F
typ.
max.
2.95 V
3.85 V
Forward voltage
I
F
= 3 A; t
p
= 100 µs
V
F
typ.
max.
3.3 V
4.7 V
Reverse voltage
2)
I
R
= 20 mA
V
R
max. 1.2 V
Reverse voltage (ESD device)
2)
V
R ESD
min. 5 V
Radiant intensity I
e
typ. 360 mW/sr
Radiant intensity
I
F
= 1.5 A; t
p
= 100 µs
I
e
typ. 545 mW/sr
Total radiant 󰘱ux
1)
I
F
= 1.5 A; t
p
= 100 µs
Φ
e
typ. 1720 mW
Temperature coe󰘲cient of voltage TC
V
typ. -2 mV / K
Temperature coe󰘲cient of brightness TC
I
typ. -0.3 % / K
Temperature coe󰘲cient of wavelength TC
λ
typ. 0.3 nm / K
Thermal resistance junction solder point real
3)
R
thJS
max. 9.0 K / W