Datasheet

SFH 4713A
3
Version 1.3 | 2018-07-05
Characteristics
I
F
= 1000 mA; t
p
= 10 ms; T
A
= 25 °C
Parameter Symbol Values
Peak wavelength
λ
peak
typ. 860 nm
Centroid wavelength
λ
centroid
typ. 850 nm
Spectral bandwidth at 50% I
rel,max
∆λ
typ. 34 nm
Half angle
φ
typ. 40 °
Dimensions of active chip area L x W typ. 0.75 x 0.75
mm x mm
Rise time (10% / 90%)
I
F
= 1 A; R
L
= 50 Ω
t
r
typ. 11 ns
Fall time (10% / 90%)
I
F
= 1 A; R
L
= 50 Ω
t
f
typ. 15 ns
Forward voltage V
F
typ.
max.
1.75 V
2.3 V
Reverse current
2)
V
R
= 5 V
I
R
max.
typ.
10 µA
0.01 µA
Total radiant 󰘱ux
3)
Φ
e
typ. 775 mW
Total radiant 󰘱ux
3)
I
F
= 1 A; t
p
= 100 µs
Φ
e
typ. 790 mW
Temperature coe󰘲cient of brightness TC
I
typ. -0.3 % / K
Temperature coe󰘲cient of voltage TC
V
typ. -1 mV / K
Temperature coe󰘲cient of wavelength
TC
λ
typ. 0.3 nm / K
Thermal resistance junction solder point real
4)
R
thJS
max. 16 K / W
Brightness Groups
T
A
= 25 °C
Group Radiant intensity Radiant intensity
I
F
= 1000 mA; t
p
= 10 ms I
F
= 1000 mA; t
p
= 10 ms
min. max.
I
e
I
e
CA 250 mW/sr 400 mW/sr
CB 320 mW/sr 500 mW/sr
DA 400 mW/sr 630 mW/sr
Only one group in one packing unit (variation lower 1.6:1).