Datasheet

ManualsBrandsOsram Opto Semiconductors ManualsIR EmittersIR Emitter 860nm 100mA 1.5V T1

SFH 4350

Version 1.5 | 2018-06-06

Produktdatenblatt | Version 1.1

www.osram-os.com

SFH 4350

Radial T1

High Power Infrared Emitter (850 nm)

Applications

— Electronic Equipment

— Industrial Automation (Machine controls, Light

barriers, Vision controls)

— Safety systems and CCTV

— Smoke Detectors

Features:

— Package: clear epoxy

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— High Power Infrared LED

— Emission angle ± 13°

— Very high radiant intensity

— Short switching times

— UL version available (ordering code & test conditions on request)

Ordering Information

Type Radiant intensity

Radiant intensity

Ordering Code

typ.

= 100 mA; t

= 20 ms I

= 100 mA; t

= 20 ms

SFH 4350 63 ... 500 mW/sr 200 mW/sr Q65110A2091

SFH 4350-AWBW 100 ... 320 mW/sr 200 mW/sr Q65111A2797

Summary of content (13 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 SFH 4350 SFH 4350 Radial T1 High Power Infrared Emitter (850 nm) Applications ——Electronic Equipment ——Safety systems and CCTV ——Industrial Automation (Machine controls, Light barriers, Vision controls) ——Smoke Detectors Features: ——Package: clear epoxy ——ESD: 2 kV acc.
PAGE 2
SFH 4350 Maximum Ratings TA = 25 °C Parameter Symbol Operating temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Reverse voltage 2) VR max. 12 V Forward current IF max. 100 mA Surge current tp ≤ 100 µs; D = 0 IFSM max. 1A Power consumption Ptot max. 180 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.
PAGE 3
SFH 4350 Characteristics IF = 100 mA; tp = 20 ms; TA = 25 °C Parameter Symbol Peak wavelength λpeak typ. 860 nm Centroid wavelength λcentroid typ. 850 nm Spectral bandwidth at 50% Irel,max ∆λ typ. 30 nm Half angle φ typ. 13 ° Dimensions of active chip area LxW typ. 0.3 x 0.3 mm x mm Rise time (10% / 90%) IF = 100 mA; RL = 50 Ω tr typ. 12 ns Fall time (10% / 90%) IF = 100 mA; RL = 50 Ω tf typ. 12 ns Forward voltage VF typ. max. 1.5 V 1.
PAGE 4
SFH 4350 Brightness Groups TA = 25 °C Group V Radiant intensity IF = 100 mA; tp = 20 ms min. Ie Radiant intensity IF = 100 mA; tp = 20 ms max. Ie 63 mW/sr 125 mW/sr AW 100 mW/sr 200 mW/sr BW 160 mW/sr 320 mW/sr CW 250 mW/sr 500 mW/sr Only one group in one packing unit (variation lower 2:1) Relative Spectral Emission 5), 6) Irel = f (λ); IF = 100 mA; tp = 20 ms OHF04132 100 I rel % 80 60 40 20 0 700 750 800 850 nm 950 λ 4 Version 1.
PAGE 5
SFH 4350 Radiation Characteristics 5), 6) Irel = f (φ) 40˚ 30˚ 20˚ 10˚ ϕ 0˚ OHF02499 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 0.8 Forward current 0.6 0˚ 20˚ OHL01713 100 A 60˚ 80˚ 100˚ 120˚ 5), 6) Ie/Ie(100mA) = f (IF); single pulse; tp = 25 µs OHL01715 101 Ie I e (100 mA) 10-1 5 100 5 10-2 10-1 5 5 10-3 10-2 5 5 10-4 40˚ Radiant Intensity 5), 6) IF = f (VF); single pulse; tp = 100 µs IF 0.4 0 0.5 1 1.5 2 2.5 V 3 VF 5 Version 1.
PAGE 6
SFH 4350 Max. Permissible Forward Current Permissible Pulse Handling Capability IF,max = f (TA); RthJA = 450 K / W IF = f (tp); duty cycle D = parameter; TA = 25°C OHR00880 125 IF Ι F mA 1.2 A 1.0 100 75 0.6 50 0.4 25 0 20 40 60 80 ˚C 100 T IF = f (tp); duty cycle D = parameter; TA = 85°C OHF05587 t D = TP 0.7 0.6 0.5 0.4 0.3 0.2 IF T 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 0.2 Permissible Pulse Handling Capability 0.9 A IF 0.8 t D = TP D= 0.
PAGE 7
SFH 4350 1.2 (0.047) Approximate Weight: 178.0 mg Package marking: Anode Pin 1 4.1 (0.161) 3.9 (0.154) 1 Chip position 3.3 (0.130) 6.3 (0.248) 5.9 (0.232) Description Anode Cathode 2 0.4 (0.016) 2 0.8 (0.031) 1.8 (0.071) Surface not flat 5.2 (0.205) 4.5 (0.177) 7 Version 1.5 | 2018-06-06 3.1 (0.122) 2.9 (0.114) 7) 0.6 (0.024) 0.4 (0.016) 0.7 (0.028) 0.4 (0.016) 2.54 (0.100) spacing Dimensional Drawing 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.
PAGE 8
SFH 4350 Recommended Solder Pad Pad 1: cathode 8 Version 1.
PAGE 9
SFH 4350 TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t 9 Version 1.
PAGE 10
SFH 4350 Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
PAGE 11
SFH 4350 Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
PAGE 12
SFH 4350 Glossary 1) Radiant intensity: Measured at a solid angle of Ω = 0.01 sr 2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse operation is not allowed. 3) Total radiant flux: Measured with integrating sphere.