Datasheet

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SFH 3100 F

Version 1.5 | 2018-10-08

Produktdatenblatt | Version 1.1

www.osram-os.com

SFH 3100 F

Radial Mini Sidelooker

Silicon NPN Phototransistor with Daylight - Cuto󰘯

Filter

Applications

— Industrial Automation (Machine Controls, Light

Barriers, Vision Controls)

Features:

— Package: black epoxy

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Spectral range of sensitivity: (typ) 850 ... 1100 nm

— Narrow half angle

— Small outline dimensions

— Same package as IRED SFH 4141

— High coupling factor in light barriers with SFH 4141

— Easy identi󰘰cation of SFH 3100 F (black package) and SFH 4141 (clear package)

Ordering Information

Type Photocurrent Ordering Code

= 5 V;

= 950 nm; E

= 0.5 mW/cm²

PCE

SFH 3100 F 400 ... 5000 µA Q62702P5073

SFH 3100 F-2/3/4 630 ... 3200 µA Q62702P5475

Only one bin within one packing unit (variation less than 2:1)

Summary of content (14 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 SFH 3100 F SFH 3100 F Radial Mini Sidelooker Silicon NPN Phototransistor with Daylight - Cutoff Filter Applications ——Industrial Automation (Machine Controls, Light Barriers, Vision Controls) Features: ——Package: black epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Spectral range of sensitivity: (typ) 850 ...
PAGE 2
SFH 3100 F Maximum Ratings TA = 25 °C Parameter Symbol Operating temperature Top min. max. -40 °C 85 °C Storage temperature Tstg min. max. -40 °C 85 °C Collector-emitter voltage VCE max. 35 V Collector current IC max. 50 mA Collector surge current τ ≤ 10 µs ICS max. 100 mA Emitter-collector voltage VEC max. 7V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.
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SFH 3100 F Characteristics TA = 25 °C Parameter Symbol Wavelength of max sensitivity λS max typ. 920 nm Spectral range of sensitivity λ10% typ. 850 ... 1100 nm Chip dimensions LxW typ. 0.55 x 0.55 mm x mm Radiant sensitive area A typ. 0.11 mm² Half angle φ typ. 14 ° Dark current VCE = 20 V; E = 0 ICE0 typ. max. Rise time IC = 1 mA; VCC = 5 V; RL = 1 kΩ tr typ. 7 µs Fall time IC = 1 mA; VCC = 5 V; RL = 1 kΩ tf typ.
PAGE 4
SFH 3100 F Grouping TA = 25 °C Group Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² min. IPCE Photocurrent VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² max. IPCE 1 400 µA 800 µA 2 630 µA 1250 µA 3 1000 µA 2000 µA 4 1600 µA 3200 µA 5 2500 µA 5000 µA Relative Spectral Sensitivity 2), 3) Srel = f (λ) OHF04046 100 Srel % 80 70 60 50 40 30 20 10 0 700 800 900 1000 nm 1100 λ 4 Version 1.
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SFH 3100 F Photocurrent Photocurrent 2), 3) IPCE = f (Ee) ; VCE = 5 V 2), 3) IPCE = f (VCE), Ee = Parameter OHF00378 10 1 mA Ι PCE OHF00386 2.0 mA Ι PCE 1.8 1.0 mW/cm 2 0.5 mW/cm 2 0.25 mW/cm 2 0.1 mW/cm 2 1.6 10 0 1.4 1.2 10 -1 1.0 0.8 0.6 10 -2 0.4 0.2 10 -3 -3 10 2 10 -2 Dark Current 10 -1 mW/cm 10 0 Ee 2), 3) ICE0 = f (VCE) ; E = 0 ; OHF04049 10 1 nA I CEO 10 0 10 -1 10 -2 0 5 10 15 20 25 30 V 35 VCE 5 Version 1.
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SFH 3100 F Collector-Emitter Capacitance 2), 3) CCE = f (VCE); f = 1 MHz; E = 0 ; OHF04051 8 pF C CE 7 6 5 4 3 2 1 0 -3 10 10 -2 10 -1 10 0 10 1 V 10 2 VCE Dark Current Photocurrent 2) ICE0 = f (TA); E = 0 IPCE,rel = f (TA); VCE = 5 V OHF04050 10 4 nA Ι PCE I CEO Ι PCE 25 10 3 10 2) 2 OHF01524 1.6 1.4 1.2 1.0 10 1 0.8 0.6 10 0 0.4 10 -1 10 -2 -25 0.2 0 25 50 75 ˚C 100 TA 6 Version 1.
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SFH 3100 F Power Consumption Ptot = f (TA) OHF00381 160 Ptot mW 140 120 100 80 60 40 20 0 0 20 40 80 ˚C 100 TA 60 7 Version 1.
PAGE 8
SFH 3100 F 156.0 mg Package marking: Collector 8 Version 1.5 | 2018-10-08 0.5 (0.020) x 45˚ 4.1 (0.161) 3.9 (0.154) 0.84 (0.033) 3.0 (0.118) 2.8 (0.110) 1.04 (0.041) 0.84 (0.033) 17.77 (0.700) 17.27 (0.680) Approximate Weight: R 0.9 (0.035) R 0.7 (0.028) 1.04 (0.041) 2.2 (0.087) 2.0 (0.079) 0.84 (0.033) 0.64 (0.025) 0.3 (0.012) 16.5 (0.650) 16.0 (0.630) 60˚ 0.5 (0.020) 1.42 (0.056) 1.22 (0.048) 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) Emitter/ Cathode 3.1 (0.122) 2.9 (0.
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SFH 3100 F Recommended Solder Pad Pad 1: emitter 9 Version 1.
PAGE 10
SFH 3100 F TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t 10 Version 1.
PAGE 11
SFH 3100 F Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
PAGE 12
SFH 3100 F Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
PAGE 13
SFH 3100 F Glossary 1) IPCEmin: IPCEmin is the min. photocurrent of the specified group. 2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devices, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line.