Datasheet

BPW 34 FASR
3
Version 1.5 | 2018-06-26
Characteristics
T
A
= 25 °C
Parameter Symbol Values
Wavelength of max sensitivity
λ
S max
typ. 880 nm
Spectral range of sensitivity
λ
10%
typ. 730 ... 1100
nm
Radiant sensitive area A typ. 7.02 mm²
Dimensions of active chip area L x W typ. 2.65 x 2.65
mm x mm
Half angle
φ
typ. 60 °
Dark current
V
R
= 10 V
I
R
typ.
max.
2 nA
30 nA
Spectral sensitivity of the chip
λ = 870 nm
S
λ typ
typ. 0.65 A / W
Quantum yield of the chip
λ = 870 nm
η
typ. 0.93 Electrons
/ Photon
Open-circuit voltage
E
e
= 0.5 mW/cm²; λ = 870 nm
V
O
min.
typ.
250 mV
320 mV
Short-circuit current
E
e
= 0.5 mW/cm²; λ = 870 nm
I
SC
typ. 23 µA
Rise time
V
R
= 5 V; R
L
= 50 Ω; λ = 850 nm; I
P
= 800 µA
t
r
typ. 0.02 µs
Fall time
V
R
= 5 V; R
L
= 50 Ω; λ = 850 nm; I
P
= 800 µA
t
f
typ. 0.02 µs
Forward Voltage
I
F
= 100 mA; E = 0
V
F
typ. 1.3 V
Capacitance
V
R
= 0 V; f = 1 MHz; E = 0
C
0
typ. 72 pF
Temperature Coe󰘲cient of Voltage TC
V
typ. -2.6 mV / K
Temperature coe󰘲cient of short-circuit current
λ = 870 nm
TC
I
typ. 0.03 % / K
Noise equivalent power
V
R
= 10 V; λ = 870 nm
NEP typ. 0.039 pW /
Hz
1/2
Detection limit
V
R
= 10 V; λ = 870 nm
D* typ. 6.8e12 cm x
Hz
1/2
/ W