Datasheet

BPW 21
3
Version 1.3 | 2018-06-21
Characteristics
T
A
= 25 °C
Parameter Symbol Values
Spectral sensitivity
V
R
= 5 V; Std. Light A; T=2856 K
S min.
typ.
5.5 nA/lx
10 nA/lx
Wavelength of max sensitivity
λ
S max
typ. 550 nm
Spectral range of sensitivity
λ
10%
typ. 350 ... 820 nm
Radiant sensitive area A typ. 7.45 mm²
Dimensions of active chip area L x W typ. 2.73 x 2.73
mm x mm
Half angle
φ
typ. 55 °
Dark current
V
R
= 5 V
I
R
typ.
max.
2 nA
30 nA
Dark current
V
R
= 10 mV
I
R
typ.
max.
8 pA
200 pA
Spectral sensitivity of the chip
λ = 550 nm
S
λ
typ. 0.34 A / W
Quantum yield of the chip
λ = 550 nm
η
typ. 0.77 Electrons
/ Photon
Open-circuit voltage
E
v
= 1000 lx; Std. Light A
V
O
min.
typ.
320 mV
400 mV
Short-circuit current
E
v
= 1000 lx; Std. Light A
I
SC
typ. 10 µA
Rise time
V
R
= 5 V; R
L
= 1 kΩ; λ = 550 nm
t
r
typ. 1.5 µs
Fall time
V
R
= 5 V; R
L
= 1 kΩ; λ = 550 nm
t
f
typ. 1.5 µs
Forward voltage
I
F
= 100 mA; E = 0
V
F
typ. 1.2 V
Capacitance
V
R
= 0 V; f = 1 MHz; E = 0
C
0
typ. 580 pF
Temperature coe󰘲cient of voltage TC
V
typ. -2.6 mV / K
Temperature coe󰘲cient of short-circuit current
λ = 550 nm
TC
I
typ. -0.05 % / K
Noise equivalent power
V
R
= 5 V; λ = 550 nm
NEP typ. 0.074 pW /
Hz
1/2
Detection limit
V
R
= 5 V; λ = 550 nm
D* typ. 3.7e12 cm x
Hz
1/2
/ W