Datasheet

ManualsBrandsOsram Opto Semiconductors ManualsOptical DetectorsPhotodiode 950 nm 150 mW DIL

BP 104 F

Version 1.6 | 2019-07-09

Produktdatenblatt | Version 1.1

www.osram-os.com

Applications

BP 104 F

DIL

Silicon PIN Photodiode with Daylight Blocking Filter

— Electronic Equipment — Industrial Automation (Machine Controls, Light

Barriers, Vision Controls)

Features:

— Package: black epoxy

— Quali󰘰cations: The product quali󰘰cation test plan is based on the guidelines of AEC-Q101-REV-C,

Stress Test Quali󰘰cation for Automotive Grade Discrete Semiconductors.

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

— Especially suitable for applications of 950 nm

— Short switching time (typ. 20 ns)

— DIL plastic package with high packing density

Ordering Information

Type Photocurrent Photocurrent Ordering Code

typ.

= 1 mW/cm²;

= 950 nm; V

= 5 V E

= 1 mW/cm²;

= 950 nm; V

= 5 V

BP 104 F ≥ 25 µA 34 µA Q62702P0084

Summary of content (15 pages)

PAGE 1
www.osram-os.com Produktdatenblatt | Version 1.1 BP 104 F BP 104 F DIL Silicon PIN Photodiode with Daylight Blocking Filter Applications ——Electronic Equipment ——Industrial Automation (Machine Controls, Light Barriers, Vision Controls) Features: ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc.
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BP 104 F Maximum Ratings TA = 25 °C Parameter Symbol Operating Temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Reverse voltage VR max. 5V Reverse voltage t ≤ 2 µs; TA = 25 °C VR max. 20 V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 Version 1.
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BP 104 F Characteristics TA = 25 °C Parameter Symbol Wavelength of max sensitivity λS max typ. 950 nm Spectral range of sensitivity λ10% typ. 800 ... 1100 nm Radiant sensitive area A typ. 4.84 mm² Dimensions of active chip area LxW typ. 2.2 x 2.2 mm x mm Half angle φ typ. 60 ° Dark current VR = 10 V IR typ. max. Spectral sensitivity of the chip λ = 950 nm Sλ typ. 0.7 A / W Quantum yield of the chip λ = 950 nm η typ. 0.91 Electrons / Photon Open-circuit voltage Ee = 0.
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BP 104 F Relative Spectral Sensitivity 1), 2) Srel = f (λ) OHF00368 100 S rel % 80 60 40 20 0 700 Directional Characteristics 800 900 1000 nm λ 1200 1), 2) Srel = f (φ) 40 30 20 10 50 ϕ 0 1.0 0.8 60 0.6 70 0.4 80 0.2 0 90 1.0 0.8 100 OHF01402 4 Version 1.6 | 2019-07-09 0.6 0.
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BP 104 F Photocurrent/Open-Circuit Voltage IP (VR = 5 V) / VO = f (Ee) Dark Current 1), 2) IR = f (VR); E = 0 OHF01056 10 3 µA ΙP 1), 2) 10 2 10 4 mV OHF00080 4000 VO ΙR pA 10 3 3000 10 2 2000 10 1 1000 10 0 0 VO 10 1 ΙP 10 0 10 -1 10 0 10 1 10 2 2 µW/cm 10 4 Ee Dark Current 1), 2) IR = f (VR); E = 0 OHF02284 10 2 nA ΙR 10 1 10 0 10 -1 0 2 4 6 8 10 12 14 16 V 20 VR 5 Version 1.
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BP 104 F Capacitance 1), 2) C = f (VR); f = 1MHz; E = 0; TA = 25°C OHF01778 60 pF C 50 40 30 20 10 0 -2 10 10 -1 Dark Current 10 0 10 1 V 10 2 VR 1) IR = f (TA); E = 0; VR = 10 V OHF05717 104 IR nA 103 102 101 100 10-1 0 20 40 60 80 ˚C 100 TA 6 Version 1.
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BP 104 F Power Consumption Ptot = f (TA) OHF00394 160 mW Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 ˚C 100 TA 7 Version 1.
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BP 104 F Dimensional Drawing 3) Further Information Approximate Weight: 72.0 mg Package marking: Cathode 8 Version 1.
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BP 104 F TTW Soldering IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ∆T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t 9 Version 1.
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BP 104 F Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for exposure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices.
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BP 104 F Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on the OSRAM OS website. Packing Please use the recycling operators known to you.
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BP 104 F Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devices, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ.
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BP 104 F Revision History Version Date Change 1.5 2019-06-24 Disclaimer 1.6 2019-07-09 Notes 13 Version 1.
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BP 104 F 14 Version 1.
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BP 104 F 15 Version 1.