Integration Manual
GTM353W Integration Manual
Author:
R
. Claessens
Version:
4.0 Draft 2
Creation Date:
September 20, 2006
Page:
23 of 52
Option Confidential:
This document is Option Confidential - it may not be duplicated, neither distributed externally without prior and written permission of
Option NV.
Contacts Low level High level Max. capacitive load
C1 (Vcc) --- I = 4 mA
C2 (RST)
I = -200 µA I = +200 µA
30 pF
C3 (CLK)
I = -20 µA I = +20 µA
30 pF
C5 (GND) --- ---
C6 ((Vpp) --- ---
C7 (I/O)
ME input
ME output
V = 0 V
I = -1 mA
I = +20 µA
I = +20 µA
30 pF
Table 16: Nominal test conditions on 1V8 SIM/ME interface
The maximum rise-time of I/O equals 1µs. This result in a maximum capacitive load of 70pF
on the I/O line. The maximum capacitance is the sum of all capacitors:
• Suppression capacitor on GTM, typical 17pF
• SIM driver logic on GTM, typical 5pF
• Suppression capacitor on SIM card holder, 10pF.
• Test equipment, maximum 30pF load.
• Connectors
The sum of al these capacitors, without the trace capacitance, equals 62pF. The trace
capacitance is 70pF minus all other capacitance. The maximum trace capacitance equals 70 –
62 = 8pF. This capacitance typically gives lead to a maximum length of 200mm in the worst
case.