Integration Manual

GTM353W Integration Manual
Author:
R
. Claessens
Version:
4.0 Draft 2
Creation Date:
September 20, 2006
Page:
23 of 52
Option Confidential:
This document is Option Confidential - it may not be duplicated, neither distributed externally without prior and written permission of
Option NV.
Contacts Low level High level Max. capacitive load
C1 (Vcc) --- I = 4 mA
C2 (RST)
I = -200 µA I = +200 µA
30 pF
C3 (CLK)
I = -20 µA I = +20 µA
30 pF
C5 (GND) --- ---
C6 ((Vpp) --- ---
C7 (I/O)
ME input
ME output
V = 0 V
I = -1 mA
I = +20 µA
I = +20 µA
30 pF
Table 16: Nominal test conditions on 1V8 SIM/ME interface
The maximum rise-time of I/O equals 1µs. This result in a maximum capacitive load of 70pF
on the I/O line. The maximum capacitance is the sum of all capacitors:
Suppression capacitor on GTM, typical 17pF
SIM driver logic on GTM, typical 5pF
Suppression capacitor on SIM card holder, 10pF.
Test equipment, maximum 30pF load.
Connectors
The sum of al these capacitors, without the trace capacitance, equals 62pF. The trace
capacitance is 70pF minus all other capacitance. The maximum trace capacitance equals 70 –
62 = 8pF. This capacitance typically gives lead to a maximum length of 200mm in the worst
case.