Datasheet

Reflective Object Sensor
OPB608A, OPB608B, OPB608C, OPB608R, OPB608V
© TT electronics plc
Issue D 01/2017 Page 3
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: [phone]
www.electronics.com | sensors@electronics.com
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
Notes:
(1) Distance from the front of the lens to reecve surface.
(2) Measured using Eastman Kodak gray card. The white side of the card is used as a 90% diuse reecve surface. Reference Eastman Kodak
catalog #E152 7795
(3) All parameters are tested using pulse techniques.
Electrical Characteriscs (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Infrared-LED (880 nm) (See OP240 for addional informaon)
V
F
Forward Voltage - - 1.7 V I
F
= 20 mA
I
R
Reverse Current - - 100 µA V
R
= 2 V
Infrared-LED (650 nm)
V
F
Forward Voltage - 1.9 2.5 V I
F
= 20 mA
V
R
Reverse Voltage 5 - - V I
R
= 10 µA
Infrared VCSEL (850 nm) (See OPV330 for addional informaon)
V
F
Forward Voltage - - 2.2 V I
F
= 7 mA
I
R
Reverse Current - - 30 nA V
R
= 5 V
I
TH
Threshold Current 2 - 5.5 mA -
Θ Beam Divergence - 12 - Deg. I
F
= 12 mA
Phototransistor (See OP705 for addional informaon)
V
(BR)CEO
Collector Emier Breakdown Voltage 30 - - V I
C
= 100 µA, E
E
= 0 µW/cm
2
V
(BR)ECO
Emier Collector Breakdown Voltage 0.4 - - V I
E
= 100 µA, E
E
= 0 µW/cm
2
V
CE(SAT)
Saturaon Voltage - - .40 V I
C
= 100 µA, I
F
= 20 mA, d = 0.053”
I
CEO
Collector Emier Dark Current - - 100 nA V
CE
= 5 V, E
E
= ≤ .10 µW/cm
2
, I
F
= 0
Combined
I
C(ON)
On-State Collector Current
OPB608A
OPB608B
OPB608C
OPB608R
2
1
0.5
1
-
-
-
-
-
4
-
6
V
CE
= 5 V, I
F
= 20 mA, d = 0.053 inch (1.35
mm)
(1)(2)
mA
OPB608V 5 - -
V
CE
= 5 V, I
F
= 10 mA, d = 0.053 inch (1.35
mm)
(1)(2)
I
C(OFF)
O-State Collector Current
LED
VCSEL
-
-
-
-
100
100
nA
No reecve surface, V
CE
= 5 V
I
F
= 20 mA
I
F
= 10 mA