Datasheet

© TT electronics plc
Issue B 09/2017 Page 2
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: [phone]
www.electronics.com | sensors@electronics.com
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
NPN Silicon Phototransistor
OP600 Series
Absolute Maximum Rangs (TA = 25˚C unless otherwise noted)
Collector-Emier Voltage 25 V
Emier-Collector Voltage 5 V
Storage Temperature Range -65° C to +150° C
Operang Temperature Range -65° C to +125° C
Soldering Temperature (5 seconds with soldering iron) 260° C
(1)(2)
Power Dissipaon 50 mW
(3)
Connuous Collector Current 50 mA
Electrical Characteriscs (T
A
= 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
I
C(ON)
(4)
On-State Collector Current
OP600A
OP600B
OP600C
OP643SL
OP644SL
1.2
0.6
0.3
4.0
7.0
-
-
-
-
-
-
-
1.8
1.8
1.8
8.0
22.0
V
CE
= 5 V, E
E
= 2.5 mW/cm
2(5)
mA
V
CE
= 5 V, E
E
= 20 mW/cm
2(5)
I
CEO
Collector-Dark Current - - - nA
V
CE
= 10 V, E
E
= 0
V
(BR)CEO
Collector-Emier Breakdown Voltage 25 - - V
I
C
= 100 μA
V
(BR)ECO
Emier-Collector Breakdown Voltage 5 - - V I
E
= 100 μA
V
CE(SAT)
(4)
Collector-Emier
OP600 (A, B, C)
(2)(7)
OP643-644 (SL)
(2)(7)
- - 0.4 V I
C
= 0.15 mA, E
E
= 2.5 mW/cm
2(5)
I
C
= 0.4 mA, E
E
= 20 mW/cm
2(5)
t
r
Rise Time - 15 - µs
V
cc
= 5 V, I
C
= 0.80 mA,
R
L
= 1 kΩ, See Test Circuit
t
f
Fall Time - 15 - µs
V
cc
= 5 V, I
C
= 0.80 mA,
R
L
= 1 kΩ, See Test Circuit
Notes:
(1) Refer to Applicaon Bulleng 202, which discusses proper techniques for soldering pill-type devices to PCBoards.
(2) No clean or low solids. RMA ux is recommended. Duraon can be extended to 10 seconds maximum when ow soldering.
(3) Derate linearly 0.5 mW/° C above 25° C.
(4) Juncon temperature maintained at 25° C.
(5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm
2
. The
source irradiance is not necessarily uniform over the enre lens area of the unit being tested.
(6) For OP643SL and OP644SL, light source is an unltered tungsten bulb operang at CT = 2870 K or equivalent infrared source.