Datasheet

© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
OP550, OP552, OP555, OP560, OP565,
OP750 Series
Issue A 08/2016 Page 2
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: [phone]
www.optekinc.com | www.electronics.com
OP555, OP565 (A, B, C, D)
OP550, OP552, OP560, OP750, OP770 (A, B, C, D)
Pin # Sensor
1 Emitter
2 Collector
1
2
OP555 - CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural failure in
OPTEK'S molded plastics.
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
Notes:
1. RMA ux is recommended. Duraon can be extended to 10 seconds maximum when ow soldering. A maximum 20 grams force may be applied
to the leads when soldering.
2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/° C above 25° C. For OP552, derate linearly 1.25 mW/° C above 25° C.
3. For all phototransistors in this series, the light source is an unltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and
OP555 only, a radiometric intensity level that varies less than 10% over the enre lens surface of the phototransistor being tested applies.
4. To calculate typical collector dark current in µA, use the formula I
CEO
=10
(0.040 T
A
- 3.4)
, where T
A
is ambient temperature in °C.