Datasheet
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
Hermetic Infrared Emitting Diode
OP230 Series
Issue B 07/2016 Page 3
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Notes:
1. RMA flux is recommended. Duraon can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.0 mW/° C above 25° C.
3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an I
F
= 100 mA.
4. For the OP231 series, E
E(APT)
is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of
1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10°
cone. For the OP231W series, E
E(APT)
is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius
of 0.466” (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a
10° cone. E
E(APT)
is not necessarily uniform within the measured area.
ElectricalCharacteriscs(T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TESTCONDITIONS
InputDiode
Apertured Radiant Incidence
OP231
OP232
OP233
OP234
OP235
1.5
2.0
3.0
5.0
6.0
‐
‐
‐
‐
‐
‐
6.0
‐
‐
‐
mW/
cm
2
OP231 Series
I
F
= 100 mA
(3 )(4)
Aperture = 0.250”
Distance = 1.429”
OP231W
OP232W
OP233W
OP234W
OP235W
1.5
3.5
5.0
5.0
6.0
‐
‐
‐
‐
‐
‐
7.0
‐
‐
‐
mW/
cm
2
OP231W Series
I
F
= 100 mA
(3 )(4)
Aperture = 0.250”
Distance = 0.466”
P
O
Radiant Power Output
OP231
OP232
OP233
‐
‐
‐
6.0
8.0
10.0
‐
‐
‐
mW
I
F
= 100 mA
(3 )(4)
V
F
Forward Voltage ‐ ‐ 2.0
V I
F
= 100 mA
(3)
I
R
Reverse Current ‐ ‐ 100
µA V
R
= 2.0 V
λ
P
Wavelength at Peak Emission
OP231, OP232, OP233
OP234, OP235
‐
‐
890
850
‐
‐
nm
I
F
= 10 mA
β
Spectral Bandwidth between Half Power
Points
‐ 80 ‐
nm I
F
= 10 mA
∆λ
P
/∆T
Spectral Shi with Temperature ‐ +0.30 ‐
nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
OP231 ‐ OP235
OP231W ‐ OP231W
‐
‐
18
50
‐
‐
Degree
I
F
= 100 mA
t
r
Output Rise Time ‐ 500 ‐
ns
I
F(PK)
=100 mA, PW=10 µs, and
D.C.=10.0%
t
f
Output Fall Time ‐ 250 ‐
ns
E
E(APTa)