Datasheet

DS12110 Rev 5 127/231
STM32H743xI Electrical characteristics
199
Table 52. Flash memory programming (single bank configuration nDBANK=1)
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit
t
prog
Word (266 bits) programming
time
Program/erase parallelism x 8 - 290 580
(2)
µs
Program/erase parallelism x 16 - 180 360
Program/erase parallelism x 32 - 130 260
Program/erase parallelism x 64 - 100 200
t
ERASE128KB
Sector (128 KB) erase time
Program/erase parallelism x 8 - 2 4
s
Program/erase parallelism x 16 - 1.8 3.6
Program/erase parallelism x 32 -
t
ME
Mass erase time
Program/erase parallelism x 8 - 13 26
Program/erase parallelism x 16 - 8 16
Program/erase parallelism x 32 - 6 12
Program/erase parallelism x 64 - 5 10
V
prog
Programming voltage
Program parallelism x 8
1.62 - 3.6
V
Program parallelism x 16
Program parallelism x 32
Program parallelism x 64 1.8 - 3.6
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 10K erase operations.
Table 53. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
N
END
Endurance T
J
= –40 to +125 °C (6 suffix versions)
10
kcycles
t
RET
Data retention 1 kcycle at T
A
= 85 °C 30
Years
10 kcycles at T
A
= 55 °C 20
1. Guaranteed by characterization results.