Datasheet

Electrical characteristics STM32H743xI
122/231 DS12110 Rev 5
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 20. Typical application with a 32.768 kHz crystal
1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
6.3.9 Internal clock source characteristics
The parameters given in Table 45 and Table 48 are derived from tests performed under
ambient temperature and V
DD
supply voltage conditions summarized in Table 23: General
operating conditions.
48 MHz high-speed internal RC oscillator (HSI48)
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Table 45. HSI48 oscillator characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
HSI48
HSI48 frequency V
DD
=3.3 V, TJ=30 °C 47.7
(1)
48 48.3
(1)
MHz
TRIM
(2)
USER trimming step - - 0.17 - %
USER TRIM
COVERAGE
(3)
USER TRIMMING Coverage ± 32 steps - ±5.45 - %
DuCy(HSI48)
(2)
Duty Cycle - 45 - 55 %
ACCHSI48_REL
(3)
Accuracy of the HSI48 oscillator over
temperature (factory calibrated)
V
DD
=1.62 to 3.6 V,
T
J
=-40 to 125 °C
–4.5 - 3.5 %
DVDD(HSI48)
(3)
HSI48 oscillator frequency drift with
V
DD
(4)
V
DD
=3 to 3.6 V - 0.025 0.05
%
V
DD
=1.62 V to 3.6 V - 0.05 0.1
t
su(HSI48)
(2)
HSI48 oscillator start-up time - - 2.1 3.5 µs
I
DD(HSI48)
(2)
HSI48 oscillator power consumption - - 350 400 µA
N
T
jitter
Next transition jitter
Accumulated jitter on 28 cycles
(5)
- - ± 0.15 - ns
P
T
jitter
Paired transition jitter
Accumulated jitter on 56 cycles
(5)
- - ± 0.25 - ns
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization.
4. These values are obtained by using the formula: 
(Freq(3.6V) - Freq(3.0V)) / Freq(3.0V) or (Freq(3.6V) - Freq(1.62V)) / Freq(1.62V).