Datasheet
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) TIP47
(I
C
= 30 mAdc, I
B
= 0) TIP48
TIP49
TIP50
V
CEO(sus)
250
300
350
400
—
—
—
—
Vdc
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0) TIP47
(V
CE
= 200 Vdc, I
B
= 0) TIP48
(V
CE
= 250 Vdc, I
B
= 0) TIP49
(V
CE
= 300 Vdc, I
B
= 0) TIP50
I
CEO
—
—
—
—
1.0
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= 350 Vdc, V
BE
= 0) TIP47
(V
CE
= 400 Vdc, V
BE
= 0) TIP48
(V
CE
= 450 Vdc, V
BE
= 0) TIP49
(V
CE
= 500 Vdc, V
BE
= 0) TIP50
I
CES
—
—
—
—
1.0
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
— 1.0 mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 10 Vdc)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
h
FE
30
10
150
—
—
Collector–Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
V
CE(sat)
— 1.0 Vdc
Base–Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
V
BE(on)
— 1.5 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 2.0 MHz)
f
T
10 — MHz
Small–Signal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
25 — —
(1) Pulse Test: Pulse width 300 µs, Duty Cycle 2.0%.
TURN–ON PULSE
APPROX
+11 V
V
in
0
V
EB(off)
t
1
APPROX
+11 V
V
in
t
2
TURN–OFF PULSE
t
3
t
1
≤
7.0 ns
100 < t
2
< 500
µ
s
t
3
< 15 ns
DUTY CYCLE
≈
2.0%
APPROX –9.0 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
R
C
R
B
V
CC
V
in
C
jd
<< C
eb
–4.0 V
Figure 2. Switching Time Equivalent Circuit
0.02
Figure 3. Turn–On Time
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.1 2.01.0
T
J
= 25
°
C
V
CC
= 200 V
I
C
/I
B
= 5.0
t, TIME ( s)
µ
0.5
0.2
0.1
0.05
0.05 0.5
0.02
1.0
t
r
0.2
t
d