Datasheet
Complementary Silicon Power
Transistors
...designed for general–purpose switching and amplifier
applications.
• DC Current Gain —
h
FE
= 20–70 @ I
C
= 4.0 Adc
• Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4.0 Adc
• Excellent Safe Operating Area
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
60 Vdc
Collector–Emitter Voltage V
CER
70 Vdc
Collector–Base Voltage V
CB
100 Vdc
Emitter–Base Voltage V
EB
7.0 Vdc
Collector Current — Continuous I
C
1 5 Adc
Base Current I
B
7.0 Adc
Total Power Dissipation @ T
C
= 25C
Derate above 25C
P
D
90
0.72
Watts
W/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θ
JC
1.39 C/W
Thermal Resistance, Junction to Ambient R
θ
JA
35.7 C/W
TIP3055
TIP2955
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.1
100
1000
10
1.0 2.00.3 7.0 10
V
CE
= 4.0 V
T
J
= 25°C
h
FE
, DC CURRENT GAIN
0.2 0.5 0.7 3.0 5.0
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 5
1 Publication Order Number:
TIP3055/D
TIP3055
TIP2955
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
90 WATTS
NPN
PNP
CASE 340D–02