Datasheet

TIP3055 (NPN), TIP2955 (PNP)
http://onsemi.com
3
TIP3055
TIP2955
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.1
100
1000
10
1.0 2.00.3 7.0 10
V
CE
= 4.0 V
T
J
= 25°C
h
FE
, DC CURRENT GAIN
0.2 0.5 0.7 3.0 5.0
I
C
, COLLECTOR CURRENT (AMPS)
10
5.0
0.1
0.3
2.0
3.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0 2.0 4.0 6.0 10 20
0.2
0.5
1.0
20
30
50
100
40 60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
T
J
= 150°C
300 ms
1.0ms
10ms
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.