Datasheet

1
Motorola Bipolar Power Transistor Device Data
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain — Min h
FE
= 1000 @ I
C
= 5 A, V
CE
= 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA
V
CEO(sus)
= 60 Vdc (Min) — TIP140, TIP145
V
CEO(sus)
= 80 Vdc (Min) — TIP141, TIP146
V
CEO(sus)
= 100 Vdc (Min) — TIP142, TIP147
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
MAXIMUM RATINGS
Rating Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector–Emitter Voltage V
CEO
60 80 100 Vdc
Collector–Base Voltage V
CB
60 80 100 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current — Continuous
Peak (1)
I
C
10
15
Adc
Base Current — Continuous I
B
0.5 Adc
Total Device Dissipation
@ T
C
= 25 C
P
D
125 Watts
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.0
C/W
Thermal Resistance, Case to Ambient R
θJA
35.7
C/W
(1) 5 ms, 10% Duty Cycle.
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
BASE
EMITTER
COLLECTOR
≈ 8.0 k ≈ 40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP140/D
 Motorola, Inc. 1996
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–100 VOLTS
125 WATTS
*Motorola Preferred Device
CASE 340D–02
REV 1