Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 220 3 1

November, 2014 − Rev. 9

1 Publication Order Number:

TIP120/D

TIP120, TIP121, TIP122

(NPN); TIP125, TIP126,

TIP127 (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

= 2500 (Typ) @ I

= 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc

CEO(sus)

= 60 Vdc (Min) − TIP120, TIP125

= 80 Vdc (Min) − TIP121, TIP126

= 100 Vdc (Min) − TIP122, TIP127

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 2.0 Vdc (Max) @ I

= 3.0 Adc

= 4.0 Vdc (Max) @ I

= 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

www.onsemi.com

TIP12x = Device Code

x = 0, 1, 2, 5, 6, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP12xG

AYWW

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

Summary of content (7 pages)

PAGE 1
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.
PAGE 2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) MAXIMUM RATINGS Symbol TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Unit VCEO 60 80 100 Vdc Collector−Base Voltage VCB 60 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 5.0 8.0 Adc Base Current IB 120 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.
PAGE 3
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) COLLECTOR COLLECTOR BASE BASE ≈ 8.0 k ≈ 120 ≈ 8.0 k ≈ 120 EMITTER EMITTER Figure 1.
PAGE 4
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) 5.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC - 30 V 2.0 RC SCOPE t, TIME ( s) μ TUT V2 approx + 8.0 V RB D1 51 0 V1 approx -12 V ≈ 8.0 k ≈ 120 + 4.0 V 25 ms for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tf 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.
PAGE 5
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions.
PAGE 6
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 5000 10,000 7000 5000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150°C 3000 2000 25°C 1000 - 55°C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 3000 25°C 2000 1000 700 500 - 55°C 300 200 0.1 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.
PAGE 7
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.