Data Sheet

SS8050 — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 0.4 0.8 1.2 1.6 2.0
0.1
0.2
0.3
0.4
0.5
I
B
= 3.0mA
I
B
= 2.5mA
I
B
= 2.0mA
I
B
= 1.5mA
I
B
= 1.0mA
I
B
= 0.5mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
V
CE
= 1V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
10
100
1000
10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0.1
1
10
100
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
110100
1
10
100
1000
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
1 10 100 400
1
10
100
1000
V
CE
= 10V
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT