Data Sheet

SS8050 — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0 2
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol Parameter Value Unit
P
D
Power Dissipation 1 W
Derate Above 25°C8mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100 μA, I
E
= 0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 2 mA, I
B
= 0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 100 μA, I
C
= 0 6 V
I
CBO
Collector Cut-Off Current V
CB
= 35 V, I
E
= 0 100 nA
I
EBO
Emitter Cut-Off Current V
EB
= 6 V, I
C
= 0 100 nA
h
FE1
DC Current Gain
V
CE
= 1 V, I
C
= 5 mA 45
h
FE2
V
CE
= 1 V, I
C
= 100 mA 85 300
h
FE3
V
CE
= 1 V, I
C
= 800 mA 40
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 800 mA, I
B
= 80 mA 0.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 800 mA, I
B
= 80 mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 1 V, I
C
= 10 mA 1 V
C
ob
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
9.0 pF
f
T
Current Gain Bandwidth Product
V
CE
= 10 V, I
C
= 50 mA
100 MHz
Classification B C D
h
FE2
85 ~ 160 120 ~ 200 160 ~ 300