Data Sheet

SS8050 — NPN Epitaxial Silicon Transistor
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8050 Rev. 1.1.0
November 2014
SS8050
NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
C
= 1.5 A
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
SS8050BBU S8050 TO-92 3L Bulk
SS8050CBU S8050 TO-92 3L Bulk
SS8050CTA S8050 TO-92 3L Ammo
SS8050DBU S8050 TO-92 3L Bulk
SS8050DTA S8050 TO-92 3L Ammo
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 1.5 A
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 to 150 °C
1. Emitter 2. Base 3. Collector
TO-92
1