Data Sheet

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage SS22
SS24
V
RRM
V
RWM
V
R
20
40
V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 132°C)
I
O
2.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
100 kHz, T
C
= 127°C)
I
FRM
3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
75 A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 3)
R
q
JL
R
q
JA
24
80
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 4)
see Figure 2 (i
F
= 2.0 A)
v
F
T
J
= 25°C T
J
= 125°C
V
0.50 0.46
Maximum Instantaneous Reverse Current (Note 4)
see Figure 4 (V
R
= 40 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
0.4 5.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.