Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsDiodesSchottky rectifier DO 214AC 20 V

July, 2005 − Rev. 3

1 Publication Order Number:

SS12/D

SS12, SS14

Surface Mount

Schottky Power Rectifier

SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State of the art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity diodes in surface mount applications

where compact size and weight are critical to the system.

Features

• Small Compact Surface Mountable Package with J−Bent Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Pb−Free Packages are Available

Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm tape, 5000 units per 13 inch reel

• Polarity: Cathode Lead Indicated by Polarity Band

• Device Meets MSL 1 Requirements

• ESD Ratings: Human Body Model, 3B (> 8000 V)

Machine Model, B (> 200 V)

Device Package Shipping

†

ORDERING INFORMATION

SS12T3 SMA 5000/Tape & Ree

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES

20, 40 VOLTS

MARKING DIAGRAM

SMA

CASE 403D

PLASTIC

http://onsemi.com

SS14T3 SMA 5000/Tape & Ree

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SS1x = Specific Device Code

x = 2 or 4

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

SS1x

AYWWG

SS12T3G SMA

(Pb−Free)

5000/Tape & Ree

SS14T3G SMA

(Pb−Free)

5000/Tape & Ree

Summary of content (4 pages)

PAGE 1
SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.
PAGE 2
SS12, SS14 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Value VRRM VRWM VR SS12 SS14 Average Rectified Forward Current (At Rated VR, TC = 120°C) Unit V 20 40 IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 2.
PAGE 3
SS12, SS14 IR, MAXIMUM REVERSE CURRENT (A) 100E−3 IR, REVERSE CURRENT (A) 100E−3 10E−3 TJ = 150°C 1E−3 TJ = 100°C TJ = 150°C 10E−3 TJ = 100°C 1E−3 100E−6 100E−6 10E−6 TJ = 25°C 1E−6 0 10 20 30 VR, INSTANTANEOUS FORWARD VOLTAGE (V) 40 TJ = 25°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 40 Figure 4. Maximum Reverse Current 1.8 0.25 freq = 20 kHz dc 1.6 PFO, AVERAGE POWER DISSIPATION (W) IO, AVERAGE FORWARD CURRENT (A) 10 20 30 VR, REVERSE VOLTAGE (V) 1.4 1.
PAGE 4
SS12, SS14 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE C HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.91 0.05 1.27 0.15 2.29 4.06 4.83 0.76 c MIN 0.075 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.085 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.095 0.006 0.064 0.016 0.115 0.180 0.220 0.