Data Sheet
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
November 2013
©1999 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• 50 A, 600 V, T
C
= 100°C
• Low Saturation Voltage: V
CE
(sat) = 2.2 V @ I
C
= 50 A
• Typical Fall Time. . . . . . . . . .261ns at T
J
= 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating
Absolute Maximum Ratings T
C
= 25C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
V
CES
Collector-Emitter Voltage 600 V
V
GES
Gate-Emitter Voltage 20 V
I
C
Collector Current @ T
C
= 25C80 A
Collector Current @ T
C
= 100C50 A
I
CM (1)
Pulsed Collector Current 150 A
I
F
Diode Continuous Forward Current @ T
C
= 25C60 A
Diode Continuous Forward Current @ T
C
= 100C30 A
I
FM
Diode Maximum Forward Current 90 A
T
SC
Short Circuit Withstand Time @ T
C
= 100C10 us
P
D
Maximum Power Dissipation @ T
C
= 25C 250 W
Maximum Power Dissipation @ T
C
= 100C 100 W
T
J
Operating Junction Temperature -55 to +150 C
T
stg
Storage Temperature Range -55 to +150 C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300 C
Symbol Parameter Typ. Max. Unit
R
JC
(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 C/W
R
JC
(DIODE) Thermal Resistance, Junction-to-Case -- 1.0 C/W
R
JA
Thermal Resistance, Junction-to-Ambient -- 25 C/W
Applications
Motor Control, UPS, General Inverter.
G
C
E
TO-264
G
C
E
G
C
E