Data Sheet

SB520-SB5100
SB520 - SB5100, Rev. C2001 Fairchild Semiconductor Corporation
Features
• Metal to silicon rectifier, majority
carrier conduction.
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
• Low power loss, high efficiency.
• High current capability, low V
F.
• High surge capacity.
SB520 - SB5100
Schottky Rectifiers
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Value Units
P
D
Power Dissipation 5.0 W
R
θ
JA
Thermal Resistance, Junction to Ambient 25
°
C/W
Symbol Parameter
Device
Units
520 530 540 550 560 580 5100
V
F
Forward Voltage @ 5.0 A 0.55 0.67 0.85 V
I
R
Reverse Current @ rated V
R
T
A
= 25
°
C
0.5 mA
T
A
= 100
°
C
50 25 mA
C
T
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
500 380 pF
DO-201AD
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol Parameter
Value
Units
520 530 540 550 560 580 5100
V
RRM
Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 100 V
I
F(AV)
Average Rectified Forward Current
.375 " lead length @ T
A
= 75
°
C
5.0 A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
150 A
T
stg
Storage Temperature Range -50 to +150
°
C
T
J
Operating Junction Temperature -50 to +150
°
C
• Glass passivated