Data Sheet

©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
RFP70N06
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
60 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
70
Refer to Peak Current Curve
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.0
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 60 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60V, V
GS
= 0V - - 1 µA
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C--25µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 70A, V
GS
= 10V (Figure 9) - - 0.014 Ω
Turn-On Time t
(ON)
V
DD
= 30V, I
D
≈ 70A, R
L
= 0.43Ω,
V
GS
= 10V, R
GS
= 2.5Ω
(Figure 13)
- - 190 ns
Turn-On Delay Time t
d(ON)
-10- ns
Rise Time t
r
- 137 - ns
Turn-Off Delay Time t
d(OFF)
-32- ns
Fall Time t
f
-24- ns
Turn-Off Time t
(OFF)
- - 73 ns
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 48V, I
D
= 70A,
R
L
= 0.68Ω
I
g(REF)
= 2.2mA
(Figure 13)
- 120 156 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 65 85 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 5.0 6.5 nC
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
- 2250 - pF
Output Capacitance C
OSS
- 792 - pF
Reverse Transfer Capacitance C
RSS
- 206 - pF
Thermal Resistance, Junction to Case R
θJC
--1.0
o
C/W
Thermal Resistance, Junction to Ambient R
θJA
TO-220
- - 62
o
C/W
- - - -
-
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 70A - 1.5 V
Reverse Recovery Time t
rr
I
SD
= 70A, dI
SD
/dt = 100A/µs - 52 ns
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP70N06