Data Sheet
©2005 Fairchild Semiconductor Corporation
RFP70N06 Rev. D1
RFP70N06
N-Channel Power MOSFET
60V, 70A, 14 mΩ
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA78440.
Features
• 70A, 60V
•r
DS(on)
= 0.014Ω
• Temperature Compensated PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
•175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFP70N06 TO-220AB RFP70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
September 2013
