Data Sheet

RB751S40 — Schottky Barrier Diodes
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
RB751S40 Rev. A2 1
September 2009
RB751S40
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Flat Lead, Surface Mount Device Under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings * T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 40 V
I
F(AV)
Average Rectified Forward Current 30 mA
I
FSM
Non-Repetitive Peak Forward Current 500 mA
T
J
Operating Junction Temperature Range -55 to +125 °C
T
STG
Storage Temperature Range -55 to +125 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation (T
C
=25°C) 200 mW
R
θJA
Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
R
Breakdown Voltage I
R
=10μA
30 V
I
R
Reverse Leakage Current V
R
=30V
0.5 μA
V
F
Forward Voltage I
F
=1mA 0.37 V
SOD-523F
Band Indicates Cathode
Cathode
ELECTRICAL SYMBOL
Anode
RB751S40 Marking : 4B