Data Sheet

www.onsemi.com
2
QSD123, QSD124 — Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. λ = 880nm, AlGaAs.
Electrical/Optical Characteristics (T
A
= 25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
V
CE
Collector-Emitter Voltage 30 V
V
EC
Emitter-Collector Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
PS
Peak Sensitivity Wavelength 880 nm
Θ Reception Angle ±12 °
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, Ee = 0 100 nA
BV
CEO
Collector-Emitter Breakdown I
C
= 1mA 30 V
BV
ECO
Emitter-Collector Breakdown I
E
= 100µA 5 V
I
C(ON)
On-State Collector Current
(5)
QSD123
QSD124
Ee = 0.5mW/cm
2
, V
CE
= 5V
4
6
mA
mA
V
CE(SAT)
Saturation Voltage
(5)
Ee = 0.5mW/cm
2
, I
C
= 0.5mA 0.4 V
t
r
Rise Time V
CC
= 5V, R
L
= 100Ω, I
C
= 0.2mA 7 µs
t
f
Fall Time 7
µs
29
16