Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsPhotodiodes & PhototransistorsPhototransistor 5 mm

QSD123, QSD124 — Plastic Silicon Infrared Phototransistor

Publication Order Number:

QSD123/D

Semiconductor Components Industries, LLC.

October-2017, Rev. 2

QSD123, QSD124

Plastic Silicon Infrared Phototransistor

Features

■

NPN Silicon Phototransistor

■

Package Type: T-1 3/4

■

Matched Emitter: QED12X/QED22X/QED23X

■

Narrow Reception Angle: 24°C

■

Daylight Filter

■

Package Material and Color: Black Epoxy

■

High Sensitivity

Description

The QSD123/124 is a phototransistor encapsulated in

an infrared transparent, black T-1 3/4 package.

Package Dimensions

0.195 (4.95)

0.040 (1.02)

NOM

0.305 (7.75)

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)

SQ. (2X)

REFERENCE

SURFACE

COLLECTOR

0.800 (20.3)

0.100 (2.54) NOM

0.500 (1.25)

EMITTER

COLLECTOR

EMITTER

Notes:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.

Schematic

Summary of content (4 pages)

PAGE 1
Features Description ■ NPN Silicon Phototransistor The QSD123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. ■ ■ ■ ■ ■ ■ Package Type: T-1 3/4 Matched Emitter: QED12X/QED22X/QED23X Narrow Reception Angle: 24°C Daylight Filter Package Material and Color: Black Epoxy High Sensitivity Package Dimensions 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR Schematic COLLECTOR 0.500 (1.25) 0.100 (2.54) NOM 0.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 100 110 100 90 80 70 IC(ON) - Light Current (mA) 120 60 130 10 50 40 140 150 30 20 160 1 10 170 180 1.0 0.1 0.0 0.2 0.4 0.6 0.8 0.8 0.4 0.6 0.2 0.0 0.2 0.4 0.6 0.8 1.0 Ee - Radiant Intensity (mW/cm 2) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage I L - Normalized Light Current 101 100 10-1 10-2 Ie=1mW/cm 2 Ie=0.
PAGE 4
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