Data Sheet

©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
QEB373 Rev. 1.0.1 2
QEB373 — Subminiature Plastic Infrared Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
(T
A
= 25°C)
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -40 to +100 °C
T
STG
Storage Temperature -40 to +100 °C
T
SOL-I
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec °C
T
SOL-F
Soldering Temperature (Flow)
(2,3)
260 for 10 sec °C
I
F
Continuous Forward Current 50 mA
V
R
Reverse Voltage 5 V
P
D
Power Dissipation
(1)
100 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
λ
P
Peak Emission Wavelength I
F
= 100mA 875 nm
Θ Emission Angle I
F
= 100mA ±12 °
V
F
Forward Voltage I
F
= 100mA, t
p
= 20ms 1.7 V
I
R
Reverse Current V
R
= 5V 100 µA
I
e
Radiant Intensity I
F
= 100mA, tp = 20ms 16 mW/sr
t
r
Rise Time I
F
= 100mA 800 ns
t
f
Fall Time t
p
= 20ms 800 ns