Data Sheet

MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm
2
.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter
Max.
Unit
MPSA06 MMBTA06
(3)
PZTA06
(4)
P
D
Total Device Dissipation 625 350 1000 mW
Derate Above 25
°C 5.0 2.8 8.0 mW/°C
R
θJC
Thermal Resistance, Junction-to-Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 200 357 125 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(5)
I
C
= 1.0 mA, I
B
= 0 80 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 100 μA, I
C
= 0 4.0 V
I
CEO
Collector Cut-Off Current V
CE
= 60 V, I
B
= 0 0.1 μA
I
CBO
Collector Cut-Off Current V
CB
= 80 V, I
E
= 0 0.1 μA
On Characteristics
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V 100
I
C
= 100 mA, V
CE
= 1.0 V 100
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 100 mA, I
B
= 10 mA 0.25 V
V
BE(on)
Base-Emitter On Voltage I
C
= 100 mA, V
CE
= 1.0 V 1.2 V
Small Signal Characteristics
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 2.0 V,
f = 100 MHz
100 MHz