Data Sheet

PN2907 / MMBT2907 — PNP General-Purpose Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(5)
I
C
= -10 mA, I
B
= 0 -40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -10 μA, I
E
= 0 -60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= -10 μA, I
C
= 0 -5.0 V
I
CEX
Collector Cut-Off Current V
CE
= -30 V, V
EB
= -0.5 V -50 nA
I
BL
Base Cut-Off Current V
CE
= -30 V, V
EB
= -0.5 V -50 nA
I
CBO
Collector Cut-Off Current
V
CB
= -50 V, I
E
= 0 -20 nA
V
CB
= -50 V, I
E
= 0, T
A
= 150°C -20 μA
On Characteristics
(5)
h
FE
DC Current Gain
V
CE
= -10 V, I
C
= -0.1 mA 35
V
CE
= -10 V, I
C
= -1.0 mA 50
V
CE
= -10 V, I
C
= -10 mA 70
V
CE
= -10 V, I
C
= -150 mA 100 300
V
CE
= -10 V, I
C
= -500 mA 30
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA -0.4
V
I
C
= -500 mA, I
B
= -50 mA -1.6
V
BE
(sat) Base-Emitter Saturation Voltage
I
C
= -150 mA, I
B
= -15 mA -1.3
V
I
C
= -500 mA, I
B
= -50 mA -2.6
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= -10 V, f = 1.0 MHz 8 pF
C
ib
Input Capacitance V
EB
= -2.0 V, f = 1.0 MHz 30 pF
h
fe
Small-Signal Current Gain
I
C
= -50 mA, V
CE
= -20 V,
f = 100 MHz
2
Switching Characteristics
t
on
Turn-On Time
V
CC
= -30 V, I
C
= -150 mA,
I
B1
= -15 mA
45 ns
t
d
Delay Time 10 ns
t
r
Rise Time 40 ns
t
off
Turn-Off Time
V
CC
= -6.0 V, I
C
= -150 mA,
I
B1
= I
B2
= -15mA
100 ns
t
s
Storage Time 80 ns
t
f
Fall Time 30 ns
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