Data Sheet

PN2907 / MMBT2907 — PNP General-Purpose Transistor
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage -40 V
V
CBO
Collector-Base Voltage -60 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current - Continuous -800 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter
Max.
Unit
PN2907
(3)
MMBT2907
(4)
P
D
Total Device Dissipation 625 350 mW
Derate Above 25°C5.02.8mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
www.onsemi.com
2