Data Sheet

NZT751 — PNP Current Driver Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
NZT751 Rev. 2.2 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Power Dissipation vs.
Ambient Temperature
0.01 0.1 1 10
0
20
40
60
80
100
120
140
I - COLLECTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAIN
FE
25 °C
C
V = 5V
CE
125 °C
- 40 °C
0.1 1 5
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
- 40 ºC
25 °C
C
β
= 10
125 °C
0.1 1 10
0.5
1
1.5
2
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β
= 10
- 40 ºC
25 °C
125 °C
0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
- 40 ºC
25 °C
125 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 50V
CB
º
CBO
0 25 50 75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223