Data Sheet

NZT751 — PNP Current Driver Transistor
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
NZT751 Rev. 2.2 2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Max.
Unit
P
D
Total Device Dissipation 1.2 W
Derate Above 25°C 9.7 mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 103 °C/W
Symbol Parameter Conditions Min. Max. Unit
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0 -60 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100 μA, I
E
= 0 -80 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10 μA, I
C
= 0 -5.0 V
I
CBO
Collector-Base Cut-Off Current V
CB
= -80 V, I
E
= 0 -100 nA
I
EBO
Emitter-Base Cut-Off Current
V
EB
= -4.0 V, I
C
= 0 -0.1 μA
h
FE
DC Current Gain
(4)
I
C
= -50 mA, V
CE
= -2.0 V 75
I
C
= -500 mA, V
CE
= -2.0 V 75
I
C
= -1.0 A, V
CE
= -2.0 V 75
I
C
= -2.0 A, V
CE
= -2.0 V 40
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(4)
I
C
= -1.0 A, I
B
= -100 mA -0.3
V
I
C
= -2.0 A, I
B
= -200 mA -0.5
V
BE
(sat) Base-Emitter Saturation Voltage
(4)
I
C
= -1.0 A, I
B
= -100 mA -1.2 V
V
BE
(on) Base-Emitter On Voltage
(4)
I
C
= -1.0 A, V
CE
= -2.0 V -1.0 V
f
T
Current Gain - Bandwidth Product
I
C
= -50 mA, V
CE
= -5.0 V,
f = 100 MHz
75 MHz