Data Sheet

NZT751 — PNP Current Driver Transistor

NZT751 Rev. 2.2

December 2015

NZT751

PNP Current Driver Transistor

Ordering Information

Absolute Maximum Ratings

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or

low-duty cycle operation.

Part Number Marking Package Packing Method

NZT751 751 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -60 V

CBO

Collector-Base Voltage -80 V

EBO

Emitter-Base Voltage -5 V

Collector Current - Continuous -4 A

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Description

This device is designed for power amplifier, regulator, and

switching circuits where speed is important. Sourced from

Process 5P.

SOT-223

1. Base 2,4. Collector 3. Emitter