Datasheet

© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 14
1 Publication Order Number:
NTR4501N/D
NTR4501N, NVR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 2.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
3.2 A
T
A
= 85°C 2.4 A
Steady State Power
Dissipation (Note 1)
Steady State P
D
1.25 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
10.0 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1)
R
q
JA
100
°C/W
Junction−to−Ambient (Note 2)
R
q
JA
300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
20 V
88 mW @ 2.5 V
70 mW @ 4.5 V
R
DS(on)
Typ
3.6 A
I
D
Max
(Note 1)
V
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
N−Channel
3.1 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR4501NT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
TR1 = Device Code for NTR4501N
VR1 = Device Code for NVR4501N
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3
Drain
1
Gate
2
Source
xR1 MG
G
www.onsemi.com
NVR4501NT1G 3000 / Tape & Ree
l
SOT−23
(Pb−Free)