Datasheet

NTR4003N, NVR4003N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
40 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 30 V
T
J
= 25°C 1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±10 V ±1.0
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.8 1.4 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
3.4 mV/°C
Drain−to−Source On Resistance
R
DS(on)
V
GS
= 4.0 V, I
D
= 10 mA 1.0 1.5
W
V
GS
= 2.5 V, I
D
= 10 mA 1.5 2.0
Forward Transconductance g
FS
V
DS
= 3.0 V, I
D
= 10 mA 0.33 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0 V
21 42
pF
Output Capacitance C
oss
19.7 40
Reverse Transfer Capacitance C
rss
8.1 16
Total Gate Charge Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 24 V,
I
D
= 0.1 A
1.15
nC
Threshold Gate Charge Q
G(TH)
0.15
Gate−to−Source Gate Charge Q
GS
0.32
Gate−to−Drain Charge Q
GD
0.23
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 5.0 V,
I
D
= 0.1 A, R
G
= 50 W
16.7
ns
Rise Time t
r
47.9
Turn−Off Delay Time t
d(off)
65.1
Fall Time t
f
64.2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 mA
T
J
= 25°C 0.65 0.7
V
T
J
= 125°C 0.45
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 8A/ms,
I
S
= 10 mA
14 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.