Datasheet

NTA4151P, NTE4151P
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.2 0.4 0.6 0.8 1.0
0 1.6
4
1
0
Q
G
, TOTAL GATE CHARGE (nC)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
1.2
2
3
5
0.4
Figure 7. Gate−to−Source Voltage vs. Total
Gate Charge
0.8
Q
T
V
DS
= −10 V
I
D
= −0.3 A
T
A
= 25°C
2.0 2.4
T
J
= 25°C
T
J
= 125°C
Figure 8. Diode Forward Voltage vs. Current
Q
GS
Q
GD
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
Figure 9. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5