Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsMOSFET P, 20 V 301 mW SC-75

October, 2014 − Rev. 8

1 Publication Order Number:

NTA4151P/D

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel,

Gate Zener, SC−75, SC−89

Features

• Low R

DS(on)

for Higher Efficiency and Longer Battery Life

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

Parameter Symbol Value Units

Drain−to−Source Voltage V

DSS

−20 V

Gate−to−Source Voltage V

±6.0 V

Continuous Drain Current

(Note 1)

Steady State I

−760 mA

Power Dissipation (Note 1)

SC−75

SC−89

Steady State

301

313

Pulsed Drain Current

tp =10 ms

±1000 mA

Operating Junction and Storage Temperature T

STG

−55 to

150

°C

Continuous Source Current (Body Diode) I

−250 mA

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

260 °C

Gate−to−Source ESD Rating −

(Human Body Model, Method 3015)

ESD 1800 V

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

SC−75

SC−89

415

400

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

MARKING DIAGRAM

& PIN ASSIGNMENT

www.onsemi.com

xx = Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

DS(on)

TYP I

MAXV

(BR)DSS

0.26 W @ −4.5 V

−20 V

0.35 W @ −2.5 V

−760 mA

0.49 W @ −1.8 V

P−Channel MOSFET

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SC−75 / SOT−416

CASE 463

STYLE 5

Drain

Source

SC−89

CASE 463C

xx M G

Gate

Summary of content (6 pages)

PAGE 1
NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package ESD Protected Gate These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX 0.26 W @ −4.5 V 0.35 W @ −2.5 V −20 V −760 mA 0.49 W @ −1.
PAGE 2
NTA4151P, NTE4151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = −250 mA −20 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V −1.0 −100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V $1.0 $10 mA OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS = VGS, ID = −250 mA −1.
PAGE 3
NTA4151P, NTE4151P TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.7 VDS w −10 V 0.6 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) TJ = 25°C −1.5 V 0.5 VGS = −1.75 V to −4.5 V 0.4 −1.25 V 0.3 0.2 0.1 −1.0 V 0.5 0.4 0.3 0.2 TJ = 25°C TJ = 125°C 0.1 TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.4 1.6 Figure 2. Transfer Characteristics 0.5 0.4 TJ = 125°C 0.3 TJ = 25°C TJ = −55°C 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2.0 0.6 VGS = −2.5 V 0.5 TJ = 125°C 0.4 TJ = 25°C 0.
PAGE 4
NTA4151P, NTE4151P 0.7 5 QT −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD VDS = −10 V ID = −0.3 A TA = 25°C 1 0 0 0.4 2.0 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.1 TJ = 25°C 0 2.4 TJ = 125°C 0.2 0 0.4 0.6 0.8 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source Voltage vs.
PAGE 5
NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.
PAGE 6
NTA4151P, NTE4151P PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C A −X− 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. B −Y− S K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J −T− MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.