Data Sheet

Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250 µA -30 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1 µA
T
J
=55°C
-10 µA
I
GSSF
Gate - Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-0.8 -1.6 -2.5 V
T
J
=125°C -0.5 -1.3 -2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -1.1 A
0.25 0.3
Ω
T
J
=125°C
0.35 0.4
V
GS
= -10 V, I
D
= -1.3 A
0.14 0.2
I
D(ON)
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
-3 A
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -1.1 A 2 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
280 pF
C
oss
Output Capacitance 170 pF
C
rss
Reverse Transfer Capacitance 65 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 50 Ω
8 15 ns
t
r
Turn - On Rise Time 17 30 ns
t
D(off)
Turn - Off Delay Time 53 90 ns
t
f
Turn - Off Fall Time 38 80 ns
Q
g
Total Gate Charge
V
DS
= -10 V, I
D
= -1.1 A,
V
GS
= -5 V
3.4 4.4 nC
Q
gs
Gate-Source Charge 0.7 nC
Q
gd
Gate-Drain Charge 1.5 nC
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