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NDS356AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

_______________________________________________________________________________

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter NDS356AP Units

DSS

Drain-Source Voltage -30 V

GSS

Gate-Source Voltage - Continuous ±20 V

Maximum Drain Current - Continuous (Note 1a) ±1.1 A

- Pulsed ±10

Maximum Power Dissipation (Note 1a) 0.5 W

(Note 1b)

0.46

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W

Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

Publication Order Number:

NDS356AP/D

General Description

SuperSOT

-3 P-Channel logic level enhancement mode

power field effect transistors are produced using ON

Semiconductor's proprietary, high cell density, DMOS

technology. This very high density process is especially

tailored to minimize on-state resistance. These devices are

particularly suited for low voltage applications such as

notebook computer power management, portable electronics,

and other battery powered circuits where fast high-side

switching, and low in-line power loss are needed in a

very small outline surface mount package.

-1.1 A, -30 V, R

DS(ON)

= 0.3 Ω @ V

=-4.5 V

DS(ON)

= 0.2 Ω @ V

=-10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT

-3 design for superior

thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

October-2017,Rev 3

Summary of content (7 pages)

PAGE 1
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
PAGE 2
Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V V TJ =55°C -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20V, VDS = 0 V -100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, I
PAGE 3
Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -0.42 A -10 A -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Source Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 (Note 2) -0.8 Notes: 1.
PAGE 4
Typical Electrical Characteristics I D , DRAIN-SOURCE CURRENT (A) VGS = -10V -7.0 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 -10 -6.0 -5.5 -8 -5.0 -6 -4.5 -4.0 -4 -3.5 -2 -3.0 0 1.8 -4.0 1.4 -4.5 1.2 -1 V DS -2 -3 -4 , DRAIN-SOURCE VOLTAGE (V) -5.0 -5.5 1 -6.0 0.8 -7.0 -10 0.6 0.4 0 V GS = -3.5 V 1.6 -5 0 -2 -10 2 V GS = -4.5V 1.4 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -1.1A V GS = -4.5V 1.2 1 0.8 0.
PAGE 5
Typical Electrical Characteristics (continued) 5 I D = -250µA 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 -25 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (°C) 125 0.1 25°C 0.01 0 0.2 0.4 0.6 0.8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 10 -VGS , GATE-SOURCE VOLTAGE (V) 300 Ciss 200 Coss 100 Crss f = 1 MHz V GS = 0 V VDS = -5V I D = -1.1A 0.5 1 2 5 , DRAIN TO SOURCE VOLTAGE (V) 10 -10V 8 -15V 6 4 2 0 0.
PAGE 6
Typical Electrical Characteristics (continued) 20 gFS, TRANSCONDUCTANCE (SIEMENS) 5 10 V DS = - 5V -I D , DRAIN CURRENT (A) TJ = -55°C 4 25°C 3 125°C 2 1 0 0 -1 -2 -3 I D , DRAIN CURRENT (A) -4 -5 2 R 1 (O DS N) LIM 1m IT 10 10 0.5 0.05 VGS = -4.5V SINGLE PULSE RθJA = See Note 1b A TA = 25°C 0.01 0.1 0.2 0.1 100 us s ms 0m s 1s DC 0.5 1 2 5 10 - V , DRAIN-SOURCE VOLTAGE (V) 20 30 DS Figure 14. Maximum Safe Operating Area. Figure 13.
PAGE 7
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