Data Sheet

Typical Electrical Characteristics (continued)
0 1 2 3 4
0
2
4
6
8
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
D
FS
V = 5.0V
DS
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0 0.1 0.2 0.3 0.4
0
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in )
STEADY-STATE POWER DISSIPATION (W)
2
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
o
Figue 15. SuperSOT
TM _
3 Maximum
Steady-State Power Dissipation. versus Copper
Mounting Pad Area.
Figure 14. Maximum Safe Operating Area.
0 0.1 0.2 0.3 0.4
1
1.2
1.4
1.6
1.8
2oz COPPER MOUNTING PAD AREA (in )
I , STEADY-STATE DRAIN CURRENT (A)
2
1b
1a
D
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 2.7V
A
o
GS
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad. Area
Figure 17. Transient Thermal Response Curve.
Note : Thermal characterization performed using the conditions described in note 1b.
response will change depending on the circuit board design.
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
www.onsemi.com
6
0.1 1 10 60
0.01
0.1
1
10
50
CURVE BENT TO
MEASURED DATA
100 μs
10 ms
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 270
o
C/W
T
A
= 25
o
C
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
Z
θJA
(t) = r(t) x R
θJA
R
θJA
= 270
o
C/W
Duty Cycle, D = t
1
/ t
2
Peak T
J
= P
DM
x Z
θJA
(t) + T
A