Data Sheet

Typical Electrical Characteristics (continued)
-50 -25 0 25 50 75 100 125 150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250µA
D
BV , NORMALIZED
DSS
J
Figure 7. Breakdown Voltage Variation with
Temperature.
0.1 0.2 0.5 1 2 5 10 20
10
20
50
100
200
400
600
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 9. Capacitance Characteristics.
0 0.2 0.4 0.6 0.8 1 1.2
0.0001
0.001
0.01
0.1
1
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
0 1 2 3 4 5
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 1.3A
D
10V
15V
V = 5V
DS
Figure 10. Gate Charge Characteristics.
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on off
d(off)
f
r
d(on)
t t
t
tt
t
INVERTED
10%
PULSE WIDTH
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
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