Data Sheet

Figure 1. On-Region Characteristics.
0 1 2 3
0
1
2
3
4
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.0
2.7
V =4.5V
GS
DS
D
2.5
1.5
2.0
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0 0.5 1 1.5 2 2.5 3
0.5
0.75
1
1.25
1.5
1.75
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
D
V = 2.7 V
GS
-55°C
R , NORMALIZED
DS(on)
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 2.7V
GS
I = 1.3A
D
R , NORMALIZED
DS(ON)
Figure 3. On-Resistance Variation
with Temperature.
0 0.5 1 1.5 2 2.5 3
0
1
2
3
4
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25°C
125°C
V = 5.0V
DS
GS
D
T = -55°C
J
Figure 5. Transfer Characteristics.
-50 -25 0 25 50 75 100 125 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I = 250µA
D
V = V
DS GS
V , NORMALIZED
th
Figure 6. Gate Threshold Variation
with Temperature.
0 0.5 1 1.5 2 2.5 3
0.5
0.75
1
1.25
1.5
1.75
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 2.0V
GS
D
R , NORMALIZED
DS(on)
3.5
4.5
2.7
3.0
2.5
Typical Electrical Characteristics
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
www.onsemi.com
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