Data Sheet

Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current 0.42 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current 10 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 0.42 A (Note 2) 0.8 1.2 V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
)
=
T
J
−
T
A
R
θJ A
(t)
=
T
J
−
T
A
R
θ
J C
+R
θ
CA
(t)
= I
D
2
(t) × R
DS(ON ) T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
1a
1b
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
www.onsemi.com
3